ASML researchers have achieved a significant breakthrough in increasing the power output of EUV lithography light sources, a development that could boost global chip production by up to 50% by 2030. This advancement promises to reshape advanced semiconductor manufacturing economics.

The company has successfully raised EUV source power from 600 watts to 1000 watts—not merely in lab conditions, but in a system capable of meeting all customer production requirements. Michael Purvis, ASML's EUV source CTO, emphasized this is a robust, stable solution, not a short-term demonstration.

Higher source power translates directly to greater throughput. Teun van Gogh, Executive VP for ASML's NXE EUV business, stated that upgraded tools could process approximately 330 wafers per hour by 2030, up from roughly 220 currently. This significant increase will lower the cost per chip by reducing exposure time.

The breakthrough was achieved by refining the tin droplet generator, one of the most complex components in EUV systems. By doubling the rate of tin droplets to around 100,000 per second and using two smaller laser pulses for shaping, ASML enhanced both power and stability. The company sees a clear path to 1500 watts, with 2000 watts theoretically achievable.

ICgoodFind ASML's EUV power breakthrough is foundational. By directly boosting wafer throughput, it drives down chip costs at the most advanced nodes, widening its competitive moat and accelerating the industry's ability to meet AI-driven demand. Future power targets suggest this is just the beginning.