A Comprehensive Analysis of the IPB017N08N5 OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronics has placed power MOSFETs at the forefront of component innovation. Among these, the IPB017N08N5 from Infineon's OptiMOS 5 family stands out as a benchmark for performance in low-voltage applications. This article provides a detailed examination of this device, exploring its key attributes, technological advantages, and ideal use cases.

Built on an advanced super-junction process, the IPB017N08N5 is an N-channel MOSFET rated for 80 V drain-source voltage (VDS) and a continuous drain current (ID) of 170 A at 25°C. This robust current handling capability immediately signals its suitability for high-power scenarios. However, the headline feature of the OptiMOS 5 technology is its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (RDS(on)) of just 1.7 mΩ (max) at 10 V VGS. This minimal resistance is paramount, as it directly translates to reduced conduction losses. When a high current flows through the MOSFET, the power dissipated as heat (I²R loss) is drastically minimized, leading to cooler operation and significantly higher efficiency.

Beyond static losses, switching performance is critical, especially in high-frequency applications like switch-mode power supplies (SMPS) and motor drives. The IPB017N08N5 excels here as well, featuring low gate charge (Qg) and outstanding switching characteristics. The low Qg reduces the amount of energy required to turn the device on and off repeatedly, easing the drive requirements on the controller IC and minimizing dynamic switching losses. This combination of low RDS(on) and low Qg is the cornerstone of its high efficiency across a wide range of operating conditions.

The device is offered in the Infineon PG-TDSON-8 (8x8) package, which strikes an excellent balance between compact size and thermal performance. This package features a exposed drain tab that allows for efficient heat transfer to the PCB or an external heatsink, enabling the MOSFET to handle high power levels without premature thermal shutdown. This makes it an excellent choice for space-constrained applications that cannot compromise on power output or thermal management.

Typical applications for the IPB017N08N5 are extensive and include:

High-Current DC-DC Converters in server, telecom, and computing infrastructure.

Motor Control and Drives for industrial automation, robotics, and eMobility.

Synchronous Rectification in switched-mode power supplies (SMPS).

Battery Management Systems (BMS) and protection circuits.

ICGOOODFIND: The IPB017N08N5 OptiMOS 5 80 V power MOSFET from Infineon establishes a formidable standard for performance and reliability in its class. Its industry-leading low on-resistance, superior switching efficiency, and robust thermal package make it an overwhelmingly optimal choice for designers aiming to maximize power density and efficiency in demanding 48V to 60V systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, OptiMOS 5, Switching Performance.