High-Voltage N-Channel Depletion-Mode MOSFET LND150N8-G from Microchip Technology

The LND150N8-G, manufactured by Microchip Technology, is a high-voltage N-channel depletion-mode MOSFET designed for a wide range of demanding electronic applications. As a depletion-mode device, it exhibits a unique characteristic: it is normally-on when the gate-to-source voltage is zero. This fundamental property makes it exceptionally valuable for circuits requiring a default conductive path, such as constant current sources, analog switches, and high-voltage startup regulators in power supplies.

Engineered for robustness, the LND150N8-G is capable of withstanding drain-to-source voltages (V_DS) of up to 500V. This high-voltage capability allows it to operate reliably in circuits with significant potential differences, making it a cornerstone in offline power supplies, telecom systems, and industrial equipment. Its low gate threshold voltage simplifies drive circuitry, often eliminating the need for a pre-bias setup to turn the device on, which is a common challenge with enhancement-mode MOSFETs.

A key advantage of this component is its exceptional linearity in the ohmic region. This makes it an ideal choice for precision analog applications, including voltage-controlled resistors and amplifiers, where smooth and predictable operation is critical. Furthermore, the device is housed in a TO-92 package, offering a compact form factor that is both cost-effective and suitable for space-constrained designs.

Microchip's focus on quality and reliability ensures that the LND150N8-G delivers consistent performance, even in harsh environments. It serves as a critical solution for designers looking to implement efficient, high-voltage functionality without compromising on circuit simplicity or performance.

ICGOOODFIND: The LND150N8-G is a highly specialized, high-voltage depletion-mode MOSFET that provides a unique "normally-on" characteristic, excellent linearity, and robust 500V operation, making it indispensable for specific analog and power management applications.

Keywords: Depletion-Mode, High-Voltage, Normally-On, N-Channel MOSFET, Linear Region.