Infineon IPW60R190P6: Redefining High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPW60R190P6 stands as a pinnacle of high-voltage MOSFET technology, engineered to deliver exceptional performance in demanding applications.
As part of Infineon's renowned CoolMOS™ P6 series, this 600V superjunction MOSFET is built upon a revolutionary technology that drastically reduces switching and conduction losses. Its ultra-low on-state resistance (RDS(on)) of just 190mΩ is a key figure, enabling significantly reduced conduction losses compared to previous generations. This translates directly into higher efficiency, cooler operation, and the potential for more compact system designs due to reduced heat sinking requirements.
The device is particularly engineered for minimized switching losses, a critical factor in high-frequency operation. The advanced charge compensation principle of the CoolMOS™ technology ensures rapid switching speeds while maintaining robust dv/dt capability. This makes the IPW60R190P6 an ideal choice for hard- and soft-switching topologies found in:
Switch-Mode Power Supplies (SMPS)
Server and Telecommunication Power Supplies
Industrial Power Systems
Power Factor Correction (PFC) stages
Solar Inverters and Renewable Energy Systems
Furthermore, the transistor boasts excellent reverse recovery characteristics, which is crucial for improving the efficiency and reliability of the entire circuit, especially in systems utilizing freewheeling diodes. Its high ruggedness and avalanche energy capability ensure a high level of operational reliability under stressful conditions.
ICGOOODFIND: The Infineon IPW60R190P6 is a benchmark in high-voltage power MOSFETs, offering a superior blend of ultra-low on-resistance and fast switching performance. It is an optimal solution for designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.
Keywords: CoolMOS™ P6, High Efficiency, 190mΩ RDS(on), 600V MOSFET, Power Density
