Infineon IPD80R750P7ATMA1 80 mΩ StrongIRFET Power MOSFET for High-Efficiency Applications

The demand for high-efficiency power management solutions continues to grow across industries such as automotive systems, industrial motor drives, renewable energy, and computing. At the heart of these systems lies the power MOSFET, a critical component determining overall performance, thermal behavior, and energy efficiency. The Infineon IPD80R750P7ATMA1, an 80 mΩ StrongIRFET Power MOSFET, stands out as a superior solution designed to meet these rigorous demands.

Engineered with Infineon’s advanced StrongIRFET technology, this MOSFET combines low on-state resistance (RDS(on)) of just 80 mΩ with exceptional switching performance. The low RDS(on) is crucial for minimizing conduction losses, which directly translates into higher efficiency and reduced heat generation. This allows designers to either improve the thermal performance of existing systems or achieve higher power density without increasing the size of heat sinks.

A key feature of the IPD80R750P7ATMA1 is its optimized switching characteristics, which help in lowering both turn-on and turn-off losses. This makes it particularly suitable for high-frequency applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits where fast switching is essential. The device’s robust design ensures high reliability under stressful operating conditions, including high temperature and voltage spikes.

Packaged in a D2PAK (TO-263) format, this MOSFET offers excellent thermal conductivity, facilitating easier PCB layout and efficient heat dissipation. Furthermore, it is AEC-Q101 qualified, making it a preferred choice for automotive applications including electric power steering (EPS), braking systems, and LED lighting where durability and performance are non-negotiable.

ICGOOODFIND:

The Infineon IPD80R750P7ATMA1 80 mΩ StrongIRFET MOSFET is an optimal power switching device for high-efficiency applications, offering an outstanding balance of low resistance, thermal performance, and reliability for next-generation electronic systems.

Keywords:

Power MOSFET, StrongIRFET, High Efficiency, Low RDS(on), AEC-Q101 Qualified