Infineon IPD60R180C7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Key Features

The Infineon IPD60R180C7 stands as a prime example of advanced power semiconductor technology, belonging to the esteemed CoolMOS™ P7 family. This 600 V superjunction MOSFET is engineered to deliver exceptional efficiency and reliability in a wide array of power conversion applications, setting a new benchmark for performance in its class.

Key Features and Benefits

The IPD60R180C7 is designed with a focus on minimizing energy loss and maximizing power density. Its standout characteristic is an ultra-low typical on-state resistance (R DS(on)) of just 180 mΩ at 10 V gate-source voltage. This low resistance directly translates to reduced conduction losses, which is paramount for improving the overall efficiency of any power system.

Furthermore, this MOSFET exhibits exceptionally low switching losses. The CoolMOS™ P7 technology optimizes the device's parasitic capacitances (Ciss, Coss, Crss), enabling faster switching speeds. This allows for higher switching frequencies in designs, which in turn enables the use of smaller passive components like inductors and transformers, leading to more compact and cost-effective power supplies.

Other notable features include:

High dv/dt and di/dt capability for robust switching performance.

Excellent body diode characteristics for hard-switching applications.

A qualified threshold voltage (V GS(th)) that provides high noise immunity and robustness against parasitic turn-on.

Primary Applications

The combination of high efficiency and robustness makes the IPD60R180C7 an ideal choice for various demanding applications, including:

Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards like 80 Plus Titanium are critical.

Power Factor Correction (PFC) stages: Used in both interleaved and single-stage boost PFC circuits.

Lighting: High-performance LED driving solutions.

Solar inverters and other renewable energy systems.

Datasheet and Application Notes

The official datasheet is the ultimate source of truth for any design engineer. It provides all necessary absolute maximum ratings, thermal characteristics, and detailed switching performance graphs. Crucially, it contains the Safe Operating Area (SOA) diagrams, which are essential for ensuring reliable operation under all conditions.

For successful implementation, Infineon provides comprehensive Application Notes (ANs). These documents offer invaluable guidance on:

Layout recommendations to minimize parasitic inductance and ensure stable switching.

Gate driving circuit design to fully leverage the fast switching capabilities of the CoolMOS™ P7.

Thermal management solutions to keep the junction temperature within safe limits.

ICGOODFIND Summary

The Infineon IPD60R180C7 CoolMOS™ P7 transistor is a high-performance power MOSFET that delivers a superior blend of ultra-low on-state resistance and fast switching capability. It is engineered to achieve maximum efficiency and enable higher power density in systems like SMPS, PFC, and industrial drives. Leveraging its robust design and comprehensive technical resources is key to developing next-generation, energy-efficient power electronics.

Keywords:

CoolMOS™ P7, Power Transistor, High Efficiency, Low RDS(on), Switching Losses